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Preliminary
RF2483
LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC
5
Typical Applications
* TDMA/GSM/EDGE Handsets * GSM/EDGE Handsets * W-CDMA Handsets
* TDMA-Based Wireless Applications * Wireless Local Loop * Basestations
Product Description
The RF2483 is a dual-band direct I/Q to RF modulator designed for handset applications where multiple modes of operation are required. The device provides common differential I/Q inputs and a common AGC amplifier. Independent single-ended LO inputs and single-ended high and low band RF outputs are provided. The device achieves a very low out-of-band noise density of -156dBm/Hz minimizing RF filtering. Operating from a single 2.7V supply, the device is packaged in a 4mmx4mm, 20-pin, plastic leadless chip carrier.
.80 .65
1.00 0.85 .60 .24 typ
4.00 sq.
.65 .30
4 PLCS
5
MODULATORS AND UPCONVERTERS
3
.30 .18
1.85 1.55 sq.
12 max .05 .01
.75 .50 .50
.23 .13
4 PLCS
NOTES: 1 Shaded Pin is Lead 1. 2 Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. 3 Dimension applies to plated terminal: to be measured between 0.02 mm and 0.25 mm from terminal end. 4 Package Warpage: 0.05 mm max. 5 Die Thickness Allowable: 0.305 mm max.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
Package Style: LCC, 20-Pin, 4x4
uSiGe HBT
RF OUT HB GND3 GND2
GaAs HBT
GaAs MESFET Si CMOS
Features
* Dual-Band Operation 700-2200MHz * -156dBm/Hz noise@20MHz offset
RF OUT LB 17
Power Control
*
20
19
Mode Control & Biasing
18
16
GC
*
* +19dBm OIP3 * +6dBm OP1dB * 35dB Gain Control Range * Single 2.7V to 3.3V Supply
VCC3 1 VCC2 2 ISIG P 3 ISIG N 4 EN 5
*
15 GC DEC
14 VREF 13 QSIG P 12 QSIG N
+45 -45
+45 -45
11 BAND SEL 10 GND1
*
6 VCC1
7 LO LB
8 GND LO
9 LO HB
Ordering Information
RF2483 Low Noise Dual-Band Quadrature Modulator with AGC Fully Assembled Evaluation Board Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
*
Represents "GND".
RF2483 PCBA
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Rev A2 010904
5-29
RF2483
Absolute Maximum Ratings Parameter
Supply Voltage Storage Temperature Operating Ambient Temperature Input Voltage, any pin Input Power, any pin
Preliminary
Rating
-0.5 to 3.6 -40 to +150 -40 to +85 -0.5 to 3.6 +10
Unit
V C C V dBm
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Operating Range
Supply Voltage* Temperature Range* High Band Frequency Range* Low Band Frequency Range*
Min.
2.7 -40 1700 700 65 65
Specification Typ. Max.
3.3 +85 2200 1000 85 85 <1.0 110 110 10 0.5 VCC <1.0
Unit
V C MHz MHz mA mA A V V A MHz MHz dBm dBm Bandsel=2.7V Bandsel=0V Bandsel=2.7V Bandsel=0V
Condition
5
MODULATORS AND UPCONVERTERS
Bandsel =2.7V Bandsel =0V GC =2.0V, VCC =2.7V, EN =2.7V, Bandsel =2.7V, IQ =1.2VDC, TA =25oC GC =2.0V, VCC =2.7V, EN =2.7V, Bandsel =0V, IQ =1.2VDC, TA =25oC EN=0V
DC Parameters
High Band Supply Current Low Band Supply Current Sleep Current Logic Levels Input Logic Low Input Logic High Logic Pins Input Current*
0 1.4
LO Input Port
High Band Frequency Range* Low Band Frequency Range* High Band LO Input Power* LO Band LO Input Power* Input Impedance* 1700 700 -3 -3 2200 1000 6 6
0 0 50
5-30
Rev A2 010904
Preliminary
Parameter Specification Min. Typ. Max. Unit
RF2483
Condition
VCC =2.7V, EN=2.7V, Bandsel=2.7V, FLO=0dBm, PLO=1900MHz, LO HB and RF OUT HB ports are matched to 50. IQ=800mVP-P at 100kHz 1.2VDC. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC Common mode voltage Measured differentially Measured at 100kHz I/Q source impedance 50 GC=2.0V, no I/Q adjustment GC=1.5V, no I/Q adjustment GC=1.0V, no I/Q adjustment GC=0.5V, no I/Q adjustment GC=2.0V, no I/Q adjustment GC=1.5V, no I/Q adjustment GC=1.0V, no I/Q adjustment GC=0.5V, no I/Q adjustment GC=2.0V GC=1.5V GC=1.0V GC=0.5V
I/Q Modulator High Band
Baseband Input Voltage* Baseband Input Level Baseband Input Impedance* Input Bandwidth* Sideband Suppression
1.15
Carrier Suppression
3rd Harmonic of Modulation Suppression at FLO-3x100kHz
40 40 35 35
47 47 42 42 100 100
Baseband Inputs DC Current Drain* Baseband Inputs AC Current Drain*
dBc dBc dBc dBc A APP
I/Q Modulator Low Band
Baseband Input Voltage* Baseband Input Level Baseband Input Impedance* Input Bandwidth* Sideband Suppression
1.15
Carrier Suppression
50 30 30 30 30 30 30 25 15 40 40 35 35
1.2 0.8 5.5 150 37 37 44 40 52 50 33 22 59 59 48 41
1.25
V VPP k MHz dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc A APP
VCC =2.7V, EN=2.7V, Bandsel=0V, FLO=0dBm, PLO=900MHz, LO LB and RF OUT LB ports are matched to 50. IQ=800mVP-P at 100kHz 1.2VDC. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC Common mode voltage Measured differentially Measured at 100kHz I/Q source impedance 50 GC=2.0V, no I/Q adjustment GC=1.5V, no I/Q adjustment GC=1.0V, no I/Q adjustment GC=0.5V, no I/Q adjustment GC=2.0V, no I/Q adjustment GC=1.5V, no I/Q adjustment GC=1.0V, no I/Q adjustment GC=0.5V, no I/Q adjustment GC=2.0V GC=1.5V GC=1.0V GC=0.5V
3rd Harmonic of Modulation Suppression at FLO-3x100kHz
Baseband Inputs DC Current Drain* Baseband Inputs AC Current Drain*
100 100
Rev A2 010904
5-31
MODULATORS AND UPCONVERTERS
50 30 30 30 30 30 30 25 25
1.2 0.8 5.5 150 43 43 46 47 48 44 40 35
1.25
V VPP k MHz dBc dBc dBc dBc dBc dBc dBc dBc
5
RF2483
Parameter Specification Min. Typ. Max. Unit
Preliminary
Condition
VCC =2.7V, EN =2.7V, Bandsel=2.7V, FLO=0dBm, PLO=1900MHz, LO HB and RF OUT HB ports are matched to 50. Input IQ signals driven differentially and in quadrature from a 50 source impedance. TA =25oC 0 32 23 -3 -11 -23 -36 10 0.4 -7 -20 -35 -155 -156.7 +6 +20 2.0 35 29 3 -5 -17 -30 V dB dB/V k dB dB dB dB dBm/Hz dBm/Hz dBm dBm Difference between output power at GC=2.0V and GC=0.5V Calculated GC =1.0V and 1.5V GC=2.0V, IQ=800mVP-P at 100kHz GC=1.5V, IQ=800mVP-P at 100kHz GC=1.0V, IQ=800mVP-P at 100kHz GC=0.5V, IQ=800mVP-P at 100kHz GC=2.0V, IQ=800mVP-P at 100kHz GC=2.0V, IQ=0mVP-P IQ at 100kHz GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. GC=2.0V GC=1.5V GC=1.0V GC=0.5V
Variable Gain Amplifiers High Band
Gain Control Voltage Range Gain Control Range Gain Control Slope Gain Control Input Impedance* Output Power
5
MODULATORS AND UPCONVERTERS Output Noise at FLO+20MHz* Output P1dB* Output IP3*
Intermodulation IM3 tone at FLO+70kHz and FLO+130kHz relative to tone at FLO+90kHz 40 40 30 30 50 50 35 35 dBc dBc dBc dBc
5-32
Rev A2 010904
Preliminary
Parameter Specification Min. Typ. Max. Unit
RF2483
Condition
VCC =2.7V, EN=2.7V, Bandsel=0V, FLO=0dBm, PLO=900MHz, LO LB and RF OUT LB ports are matched to 50. Input IQ 1.2Vdc, signals driven differentially and in quadrature from a 50 source impedance. TA =25oC 0 32 27 10 0.8 -6 -21 -35 -156.4 -157.2 +6 +19 2.0 36 33 V dB dB/V k dB dB dB dB dBm/Hz dBm/Hz dBm dBm Difference between output power at GC=2.0V and 0.5V Calculated using output power at GC =1.0V and 1.5V GC=2.0V, IQ=800mVP-P at 100kHz GC=1.5V, IQ=800mVP-P at 100kHz GC=1.0V, IQ=800mVP-P at 100kHz GC=0.5V, IQ=800mVP-P at 100kHz GC=2.0V, IQ=800mVP-P at 100kHz GC=2.0V, IQ=0mVP-P IQ at 100kHz GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Two baseband tones at 90kHz and 110kHz applied at both I and Q inputs, each tone 400mVP-P. GC=2.0V GC=1.5V GC=1.0V GC=0.5V
Variable Gain Amplifiers Low Band
Gain Control Voltage Range Gain Control Range Gain Control Slope Gain Control Input Impedance* Output Power
Output Noise at FLO+20MHz* Output P1dB* Output IP3*
Intermodulation IM3 tone at FLO+70kHz and FLO+130kHz relative to tone at FLO+90kHz 40 40 30 25 47 49 41 31 dBc dBc dBc dBc
*=Not tested in production
MODE
Sleep High Band Mode Low Band Mode
EN
0 1 1
BANDSEL
X 1 0
COMMENTS
I/Q and GC inputs go open circuit through the use of a FET switch in sleep mode. LO input LO HB RF output=RF OUT HB LO input LO LB RF output=RF OUT LB
Rev A2 010904
5-33
MODULATORS AND UPCONVERTERS
-3 -10 -25 -38
3 -4 -19 -32
5
RF2483
Pin 1 Function VCC3 Description
Supply for RF output circuits.
VCC3
Preliminary
Interface Schematic
RF Output Amplifier
2
VCC2
Supply for modulator and biasing circuits.
VCC2 Modulator and VGA VCC2
5
MODULATORS AND UPCONVERTERS
3
ISIG P
4
ISIG N
In phase I channel positive baseband input port. Best performance is achieved when the ISIGP and ISIGN are driven differentially. The recommended CW differential drive level (VISIGP -VISIGN) is 800mVP-P. This input should be DC-biased at 1.2V0.05V. The common-mode DC coltage on the ISIGP and ISIGN input signals is used to bias the modulator. In sleep mode an internal FET switch is opened, the input goes high impedance and the modulator is de-biased. The input impedance is typically 5.5k at low frequencies and at higher frequencies can be modeled as 50 in series with 12pF to ground. Phase or amplitude errors between the ISIGP and ISIGN signals may result in the even order distortion of the modulation in the output spectrum. DC offsets between the ISIGP and ISIGN signals will result in increased carrier leakage. Small DC offsets may be deliberately applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control. Common-mode noise on the ISIGP and ISGN should be kept low as it may degrade the noise performance of the modulator. Phase offsets may be applied between the I and Q channels to improve the sideband suppression performance. In phase I channel negative baseband input port. See ISIGP.
VCC2
50 12 pF
VCC2
50 12 pF
5
ENABLE
Enables power to the device. CMOS input. Logic 1 (1.4V to VCC)=Enabled. Logic 0 (0V to 0.5V)=Powered Down.
VCC2
6
VCC1
Supply for the LO buffers and quadrature network. The sideband suppression is a function of the VCC1 voltage. The inclusion of R3 (39) lowers the voltage on VCC1 by around 400mV and results an improvement in sideband suppression but around a 0.2dB increase in noise at 20MHz offset.
VCC1 LO Quadrature Generator and Buffers GND1
5-34
Rev A2 010904
Preliminary
Pin 7 Function LOLB Description
Local oscillator input low band. This input is biased internally at around 1.6V when the chip is in low band mode and 0V when the chip is in high band mode or powered down. The LO signal typically needs to be AC coupled. The noise performance, carrier suppression at low output powers and sideband suppression are all a function of LO power. The optimum LO power is between 0dBm and 3dBm. The device will work with LO powers as low as -20dBm however this is at the expense of higher noise performance at high output powers and poorer sideband suppression. Ground return for the local oscillator input signals. The GND LO pin is effectively the complementary LO input for both the high band and low band LO signals. It has significant amounts of LO signal flowing through it. This pin is brought out as an independent ground to enable the PCB board designer to isolate the LO return from the RF outputs ground and the general chip ground. It is recommended that this ground is kept isolated from the die flag ground. Any connections between the GND LO and any other ground should be made through a ground plane. Local oscillator input high band. This input is biased internally at around 1.6V when the chip is in high band mode and 0V when the chip is in low band mode or powered down. The LO HB signal typically needs to be AC coupled. The noise performance, carrier suppression at low output powers and sideband suppression are all a function of LO power. The optimum LO power is between 0dBm and 3dBm. The device will work with LO powers as low as -20dBm however this is at the expense of higher noise performance at high output powers and poorer sideband suppression. Ground for LO buffers. Band select input to define active mode. CMOS input. Logic 1 (1.4V to VCC)=High band mode. Logic 2 (0V to 0.5V)=Low band mode.
RF2483
Interface Schematic
LOLB
GNDLO
8
GND LO
See pins 7 and 9.
5
LOHB
9
LOHB
GND LO
10 11
GND1 BAND SEL
See pin 6.
VCC2
12
QSIG N
Quadrature channel negative baseband input port. See QSIGP.
VCC2
50 12 pF
Rev A2 010904
5-35
MODULATORS AND UPCONVERTERS
RF2483
Pin 13 Function QSIG P Description
Quadrature Q channel positive baseband input port. Best performance is achieved when the ISIGP and ISIGN are driven differentially. The recommended CW differential drive level (VQSIGP VQSIGN) is 800mVP-P. This input should be DC-biased at 1.2V0.05V. The common-mode DC voltage on the QSIGP and QSIGN input signals is used to bias the modulator. In sleep mode an internal FET switch is opened, the input goes high impedance and the modulator is de-biased. The input impedance is typically 5.5k at low frequencies and at higher frequencies can be modeled as 50 in series with 12pF to ground. Phase or amplitude errors between the QSIGP and QSIGN signals which may result in an increase in the even order distortion of the modulation in the output spectrum. DC offsets between the QSIGP and QSIGN signals will result in an increased carrier leakage. Small DC offsets may be deliberately applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out the LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control. Common-mode noise on the QSIGP and QSIGN should be kept low as it may degrade the noise performance of the modulator. Phase offsets may be applied between the I and Q channels to improve the sideband suppression performance. Voltage reference decouple with an external 10nF capacitor to ground. The voltage on this pin is typically 1.67V when the chip is enabled. The voltage is 0V when the chip is powered down. The purpose of this decoupling capacitor is to filter out low frequency noise (20MHz) on the gain control lines. Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage. A voltage of around 2.5V on this pin indicates that the die flag under the chip is not grounded and the chip is not biased correctly. Voltage reference decouple with an external 1nF decoupling capacitor to ground. The voltage on this pin is a function of gain control (GC) voltage when the chip is enabled. The voltage is 0V when the chip is powered down. The purpose of this decoupling capacitor is to filter out low frequency noise (20MHz) on the gain control lines. The size of the capacitor on the GC DEC line will effect the settling time response to a change in gain control voltage. A 1nF capacitor equates to around 200ns settling time and a 0.5nF capacitor equates to a 100ns settling time. There is a trade-off between settling time and noise contributions by the gain control circuitry as gain control is applied. Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage. Gain control voltage. Maximum output power at 2.0V. Minimum output power at 0V. When the chip is enabled the input impedance is 10k referenced to 1.7VDC. When the chip is powered down a FET switch is opened and the input goes high impedance.
Preliminary
Interface Schematic
VCC2
50 12 pF
5
MODULATORS AND UPCONVERTERS
14
VREF
4 k
VCC2
+
15
GC DEC
4 k
V CC2
+ -
16
GC
VCC2
4 k
10 k 1.7 V +
-
17
RF OUT LB
RF low band output. Open collector output. The output should be biased at VCC through an inductor that can be used to form part of an output matching circuit. In our proposed applications circuit some power is dissipated in R6 (130) which appears as a de-Qing resistor in parallel with the output inductor L4. If R6 is eliminated and the RFOUT LB pin is re-matched to 50 it is possible to get approximately 5dB extra power out of the device in low band mode. Ground for RF output sections.
18
GND2
5-36
Rev A2 010904
Preliminary
Pin 19 Function Description RF OUT HB RF high band output. Open collector output.
RF2483
Interface Schematic
The output should be biased at VCC through an inductor that can be used to form part of an output matching circuit. In our proposed applications circuit some power is dissipated in R4 (180) which appears as a de-Qing resistor in parallel with the output inductor L3. If R4 is eliminated and the RFOUT HB pin is re-matched to 50 it is possible to get approximately 3dB extra power out of the device in high band mode. Ground for RF output sections. Ground for modulator, variable gain amplifier and substrate.
20 Die Flag
GND3 GND4
5
MODULATORS AND UPCONVERTERS
Rev A2 010904
5-37
RF2483
Application Notes
The baseband inputs must be driven with balanced differential signals. We suggest amplitude and phase matching <0.5dB and <0.5. Phase or gain imbalances between the complementary input signals will cause additional distortion including some second order baseband distortion. The common-mode voltage on the baseband inputs should be well controlled at 1.2V. We suggest that the common-mode DC voltage be 1.2V+0.05V. The common-mode DC voltage is used to bias the modulator; hence, deviations from 1.2V will result in changes in the current consumption, noise and intermodulation performance. The chip is designed to be driven with a single-ended LO signal. The GC DEC and VREF output pins should be decoupled to ground. We recommend a 10nF capacitor on VREF, and a 1nF capacitor on GC DEC. The purpose of this capacitor is to filter out low frequency noise (20MHz) in the gain control lines, which may cause noise on the RF signal. The capacitor on the GC DEC line will effect the settling time response to a change in power control voltage. A 1nF capacitor equates to around a 200ns settling time, and a 0.5nF capacitor equates to a 100ns settling time. There is a trade-off between settling time and phase noise as you start to apply gain control. The ground lines for the LO sections, GNDLO and GND1, are brought out of the chip independently from the ground to the RF and modulator sections. This isolates the LO signals from the RF output sections. The GND LO pin is effectively the complementary LO input for both the high band and low band LO signals. It has significant amounts of LO signal flowing through it. This is brought out as an independent ground to try to enable the PCB board designer to isolate the LO return from the RF output sections and general chip ground. The RF output ports of the RF2483 consist of open collector architecture and require pull up inductors to the supply voltage. This, in conjunction with a DC blocking capacitor provides a simple, broadband L-match network as shown in the schematic diagram. A shunt resistor is included to control the Q of the matching network and set the modulator output power. In this case, both outputs were designed to provide 0dBm.
Preliminary
An alternate output match containing a third harmonic trap was evaluated. This circuit uses a tapped-C matching network, whereby the shunt C provides a low impedance path near the third harmonic frequency. Although an additional component is required, the benefit of suppressing the third harmonic distortion may improve overall system intermodulation. This network has been shown to provide better than 20dB of improved suppression in high-band mode.
VCC C4 100 pF L3 2.2 nH R4 180
5
MODULATORS AND UPCONVERTERS
C11 2 pF C12 1 pF C15 6 pF
J4 RFOUT HB
J8 RFOUT LB C13 2 pF
L4 10 nH
R6 130 C6 100 pF VCC
Figure 1. Alternate RF output match with third-harmonic suppression. High Band LOHB (S11) and RFHB (S22) Parameters
(VCC =2.7V, VGC =2.0V, Band Sel=2.7V, EN =2.7V, T=+25C) Freq. (MHz) S11 MAG S11 ANG S22 MAG S22 ANG 1700 0.478 -110.8 0.903 -55.0 1750 0.469 -112.4 0.901 -56.2 1800 0.465 -115.1 0.902 -57.2 1850 0.472 -117.2 0.902 -58.0 1900 0.476 -117.6 0.904 -59.0 1950 0.465 -118.4 0.905 -59.6 2000 0.457 -120.8 0.906 -60.3 2050 0.452 -122.6 0.909 -60.9 2100 0.464 -123.0 0.916 -61.9 2150 0.453 -123.4 0.914 -64.0 2200 0.442 -125.4 0.879 -64.5
Low Band LOLB (S11) and RFLB (S22) Parameters
(VCC =2.7V, VGC =2.0V, Band Sel=0V, EN=2.7V, T=+25C) Freq. (MHz) S11 MAG S11 ANG S22 MAG S22 ANG 700 0.468 -63.2 0.92 -9.9 750 0.452 -67.6 0.915 -11.3 800 0.437 -72.1 0.913 -12.6 850 0.425 -76.6 0.908 -14.0 900 0.414 -81.2 0.905 -15.6 950 0.407 -85.6 0.901 -17.1 1000 0.402 -89.8 0.898 -18.8
5-38
Rev A2 010904
Preliminary
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
J4 RF OUT HB J8 RF OUT LB C13* DNI C12* DNI C15 3 pF C6 100 pF
RF2483
R6 130 VCC L4 10 nH
C4 100 pF
C11 1 pF
5
P1 GC P1-1 1 2 P1-3
*
VCC L3 3.3 nH C10 1 nF
VCC + C2 1 uF EN R2 1M
GND
3 CON3
Represents "GND".
VCC C8 1 nF
*
20 1 2 3 4 5
19
18
17
16
*
C9 1 nF C14 10 nF J7 QJ6 Q+ BAND SEL
15 14 13 12 11 6 7 8 9 10
*
P2 P1-1 1 2 P1-3 3 CON3 R1 1M GND
GC + C1 1 uF BAND SEL
J1 I+ J2 IEN
*
C7 1 nF R3 39 L1 6.8 nH C3 100 pF J3 LO LB VCC
2483400-
Note: Parts with * following the reference designator should not be populated on the evaluation board.
C5 10 pF L2 3.3 nH J5 LO HB
Rev A2 010904
5-39
MODULATORS AND UPCONVERTERS
R4 180
R5 100
RF2483
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.062", Board Material FR-4, Multi-Layer
Assembly
Preliminary
5
MODULATORS AND UPCONVERTERS
Top
Inner 1
5-40
Rev A2 010904
Preliminary
Inner 2 Back
RF2483
5
MODULATORS AND UPCONVERTERS
Rev A2 010904
5-41
RF2483
High Band Modulator Performance versus Frequency
LO=0dBm, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P
0.0 Carrier Suppression -10.0 0.0 0.0
Preliminary
High Band Modulator Performance versus LO Power
LO=1900MHz, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P
0.0
Sideband Suppression (dBc) 3rd Harmonic (dBc)
3rd Harmonic of Modulation -20.0 Output Power -20.0
Carrier Suppression -20.0 Sideband Suppression 3rd Harmonic of Modulation Output Power -20.0
-30.0
-30.0
-30.0
-30.0
-40.0
-40.0
-40.0
-40.0
-50.0
-50.0
-50.0
-50.0
5
MODULATORS AND UPCONVERTERS
-60.0 1700.0
1800.0
1900.0
2000.0
2100.0
-60.0 2200.0
-60.0 -10.0
-60.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0
Frequency (MHz)
LO Power (dBm)
High Band Output Noise 20MHz Offset versus LO Power
-152.0
High Band Output Power versus Baseband Signal Level 1.0
VCC=2.7V, LO=1900MHz, GC=2V
20.0 10.0
VCC=2.7V, LO=1900MHz 0dBm, IQ=100kHz 1.2Vdc
-153.0
Output Noise (dBm/Hz)
Output Power (dBm)
-154.0
-1.0
Output Power (dBm)
Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc Output Noise 20MHz Offset, I&Q = 0 mVpp 1.2Vdc Output Power I&Q = 800mVpp
0.0
0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 GC = 2.0V GC = 1.5V GC = 1.0V GC = 0.5V
-155.0
-2.0
-156.0
-3.0
-157.0
-4.0
-70.0 -158.0 -10.0
-5.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
-80.0 10.0
100.0
1000.0
10000.0
LO Power (dBm)
Baseband Signal Level (mVpp)
-130.0
High Band Output Noise 20MHz Offset versus Gain Control - VCC=2.7V, LO=1900MHz, GC=2V
5.0
High Band Output IP3 versus Gain Control
30.00
VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHz at 1.2VDC
-135.0
-140.0
Output Noise (dBm/Hz)
Output Power (dBm)
-145.0
Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc Output Noise 20MHz Offset, I&Q = 0mVpp 1.2Vdc Output Power I&Q=800mVpp 1.2Vdc
0.0
20.00
-5.0
10.00
-10.0
-150.0
OIP3 (dBm)
-15.0
0.00
-155.0
-20.0
-10.00 1700MHz 1800MHz 1900MHz 2000MHz
-160.0
-25.0
-20.00 -165.0
-30.0
-170.0 0.0 0.5 1.0 1.5 2.0
-35.0
-30.00 0.0 0.5 1.0 1.5 2.0 2.5
2.5
Gain Control (V)
Gain Control (V)
5-42
Rev A2 010904
Sideband Suppression (dBc) 3rd Harmonic (dBc)
Sideband Suppression
-10.0
-10.0
-10.0
Output Power (dBm) Carrier Suppression (dBc)
Output Power (dBm) Carrier Suppression (dBc)
Preliminary
High Band Output Power versus Gain Control
5.00 0.00 -5.00
RF2483
High Band Output Power versus Gain Control
5.0 0.0 -5.0
LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
Output Power (dBm)
-10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 0.0 0.5 1.0 1.5 2.0 2.5 Vcc = 2.7V Vcc = 3.0V Vcc = 3.3V
Output Power (dBm)
-10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 0.0 0.5 1.0 1.5 2.0 2.5
Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
5
Gain Control (V)
Gain Control (V)
High Band Output Power versus Gain Control
5.0 0.0 -10.0 -5.0
High Band Carrier Suppression versus Gain Control
0.0
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
1700MHz 1800MHz 1900MHz 2000MHz
Carrier Suppression (dBc)
Output Power (dBm)
-10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 0.0 0.5 1.0 1.5 2.0 2.5 1700MHz 1800MHz 1900MHz 2000MHz
-20.0
-30.0
-40.0
-50.0
-60.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
High Band Sideband Suppression versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.0 1700MHz 1800MHz 1900MHz 2000MHz 0.0
High Band Modulation's 3rd Harmonic versus Gain Control - VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
-10.0
3rd Harmonic of Modulation Suppression
-10.0
Sideband Suppression (dBc)
-20.0
-20.0
1700MHz 1800MHz 1900MHz 2000MHz
-30.0
-30.0
-40.0
-40.0
-50.0
-50.0
-60.0 0.0 0.5 1.0 1.5 2.0 2.5
-60.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
Rev A2 010904
5-43
MODULATORS AND UPCONVERTERS
RF2483
High Band Carrier Suppression versus Gain Control
0.0
Preliminary
High Band Sideband Suppression versus Gain Control LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.0 Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
-10.0
-10.0
-20.0
Sideband Suppression (dBc)
1.0 1.5 2.0 2.5
Carrier Suppression (dBc)
-20.0
-30.0
-30.0
-40.0
-40.0
-50.0
-50.0
5
MODULATORS AND UPCONVERTERS
-60.0 0.0 0.5
-60.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
High Band Sideband Suppression versus Gain Control VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC 0.00 Vcc=2.7V -10.00 Vcc=3.0V Vcc=3.3V -10.00 0.00
High Band Carrier Suppression versus Gain Control
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
Vcc=2.7V Vcc=3.0V Vcc=3.3V
Sideband Suppression (dBc)
-20.00
Carrier Suppression (dBc)
0.0 0.5 1.0 1.5 2.0 2.5
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
0.00
High Band Modulation's 3rd Harmonic versus Gain Control - LO=1900MHz 0dBm, IQ=100kHz 800mVp-p 1.2VDC
Vcc=2.7V
High Band Output IP3 versus Gain Control
25.0 20.0 15.0 10.0
LO=1900MHz 0dBm, IQ=900kHz and 1100kHz at 1.2VDC
Vcc=2.7V Vcc=3.0V Vcc=3.3V
3rd Harmonic of Modulation Suppression (dBc)
-10.00
Vcc=3.0V Vcc=3.3V
Output IP3 (dBm)
-20.00
5.0 0.0 -5.0 -10.0 -15.0
-30.00
-40.00
-50.00
-20.0 -25.0
-60.00 0.0 0.5 1.0 1.5 2.0 2.5
-30.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
5-44
Rev A2 010904
Preliminary
Low Band Modulator Performance versus Frequency
LO=0dBm, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P
0.00 Carrier Suppression -10.00 Sideband Suppression 3rd Harmonic of Modulation Output Power
-10.00 0.00
RF2483
Low Band Modulator Performance versus LO Power
LO=900MHz, VCC=2.7V, GC=2V, IQ=100kHz 800mVP-P
0.00 Carrier Suppression -10.00
-10.00 0.00
Sideband Suppression 3rd Harmonic of Modulation Output Power
-20.00
Sideband Suppression (dBc) 3rd Harmonic (dBc)
-20.00
-20.00
-20.00
-30.00
-30.00
-30.00
-30.00
-40.00
-40.00
-40.00
-40.00
-50.00
-50.00
-50.00
-50.00
-60.00
-60.00
-60.00
-60.00
Sideband Suppression (dBc) 3rd Harmonic (dBc)
Output Power (dBm) Carrier Suppression (dBc)
Output Power (dBm) Carrier Suppression (dBc)
Frequency (MHz)
LO Power (dBm)
Low Band Output Noise 20MHz Offset versus LO Power
-152.00
Low Band Output Power versus Baseband Signal Level
1.0
VCC=2.7V, LO=900MHz, GC=2V
20.0 10.0
VCC=2.7V, LO=900MHz, IQ=100kHz 1.2Vdc
-153.00
Output Noise (dBm/Hz)
Output Power (dBm)
-154.00
-1.0
Output Power (dBm)
Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc Output Noise 20MHz Offset, I&Q = 0 mVpp 1.2Vdc Output Power I&Q=800mVpp 1.2Vdc
0.0
0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 GC = 2.0V GC = 1.5V GC = 1.0V GC = 0.5V 100.0 1000.0 10000.0
-155.00
-2.0
-156.00
-3.0
-157.00
-4.0
-70.0 -158.00 -10.0
-5.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
-80.0 10.0
LO Power (dBm)
Baseband Signal Level (mVpp)
Low Band Output Noise at 20MHz Offset versus GC
-130.0
Low Band Output IP3 versus Gain Control
5.0
VCC=2.7V, LO=900MHz 0dBm
Output Noise 20MHz Offset, I&Q = 800mVpp 1.2Vdc Output Noise 20MHz Offset, I&Q = 0 mVpp 1.2Vdc Output Power I&Q=800mVpp 1.2Vdc
30.00
VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHzat 1.2VDC
700MHz 800MHz 900MHz 1000MHz
-135.0
0.0
20.00
-140.0
-5.0
Output Noise (dBm/Hz)
10.00
-10.0
-145.0
Output Power (dBm)
OIP3 (dBm)
0.00
-150.0
-15.0
-10.00
-155.0
-20.0
-20.00 -160.0
-25.0
-165.0
-30.0
-30.00
-170.0 0.0 0.5 1.0 1.5 2.0
-35.0
-40.00 0.0 0.5 1.0 1.5 2.0 2.5
2.5
Gain Control (V)
Gain Control (V)
Rev A2 010904
5-45
MODULATORS AND UPCONVERTERS
-70.00 700.0
-70.00
800.0
900.0
1000.0
1100.0
1200.0
-70.00 -10.0
-70.00
5
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
RF2483
Low Band Output Power versus Gain Control
5.00 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 -45.00 0.0 0.5 1.0 1.5 2.0 2.5 Vcc=2.7V Vcc=3.0V Vcc=3.3V -45.00 0.0 0.5 1.0
Preliminary
Low Band Output Power versus Gain Control
5.00 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 -35.00 -40.00 Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
Output Power (dBm)
5
MODULATORS AND UPCONVERTERS
Output Power (dBm)
1.5
2.0
2.5
Gain Control (V)
Gain Control (V)
Low Band Output Power versus Gain Control
5.0 0.0 -10.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 0.0 0.5 1.0 1.5 2.0 2.5 700MHz 800MHz 900MHz 1000MHz
Low Band Carrier Suppression versus Gain Control
0.0
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
700MHz 800MHz 900MHz 1000MHz
Carrier Suppression (dBc)
Output Power (dBm)
-20.0
-30.0
-40.0
-50.0
-60.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
Low Band Sideband Suppression versus Gain Control
0.0
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
700MHz 800MHz 900MHz 1000MHz
0.0
Low Band Modulation's 3rd Harmonic versus Gain Control - VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
700MHz 800MHz 900MHz 1000MHz
-10.0
-10.0
3rd Harmonic of Modulation Suppression (dBc)
Sideband Suppression (dBc)
-20.0
-20.0
-30.0
-30.0
-40.0
-50.0
-40.0
-60.0
-50.0
-70.0
-60.0 0.0 0.5 1.0 1.5 2.0 2.5
-80.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
5-46
Rev A2 010904
Preliminary
Low Band Carrier Suppression versus Gain Control
0.00
RF2483
Low Band Sideband Supperssion versus Gain Control
0.00
LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
-10.00
-10.00
Sideband Suppression (dBc)
Carrier Suppression (dBc)
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00 0.0 0.5 1.0 1.5 2.0 2.5
-70.00 0.0 0.5 1.0 1.5 2.0 2.5
5
Gain Control (V) VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
Vcc=2.7V
Gain Control (V)
Low Band Carrier Suppression versus Gain Control
0.00
Low Band Sideband Suppression versus Gain Control
0.00
VCC=2.7V, LO=0dBm, IQ=100kHz 800mVP-P 1.2VDC
Vcc=2.7V
-10.00
Vcc=3.0V Vcc=3.3V
-10.00
Vcc=3.0V Vcc=3.3V
Sideband Suppression (dBc)
Carrier Suppression (dBc)
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00 0.0 0.5 1.0 1.5 2.0 2.5
-70.00 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
0.00
Low Band Modulation's 3rd Harmonic versus Gain Control - LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
Vcc=2.7V
Low Band Output IP3 versus Gain Control
30.00
VCC=2.7V, LO=0dBm, IQ=900kHz and 1100kHzat 1.2VDC
700MHz 800MHz 900MHz 1000MHz
3rd Harmonic of Modulation Suppression (dBc)
-10.00
Vcc=3.0V Vcc=3.3V
20.00
-20.00
10.00
-30.00
OIP3 (dBm)
0.00
-40.00
-10.00
-50.00
-20.00
-60.00
-30.00
-70.00 0.0 0.5 1.0 1.5 2.0 2.5
-40.00 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
Rev A2 010904
5-47
MODULATORS AND UPCONVERTERS
RF2483
High Band Current Consumption versus Gain Control
160.0
Preliminary
Low Band Current Consumption versus Gain Control
160.00
LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
140.0
140.00
120.0
120.00
Current (mA)
80.0
Current (mA)
Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
100.0
100.00
80.00
60.0
60.00 Temp = -40C, Vcc=2.7V Temp = +25C, Vcc=2.7V Temp = +85C, Vcc=2.7V
40.0
40.00
20.0
20.00
5
MODULATORS AND UPCONVERTERS
0.0 0.0 0.5 1.0 1.5 2.0 2.5
0.00 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
High Band Current Consumption versus Gain Control
160.0
Low Band Current Consumption versus Gain Control
160.0
LO=1900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
LO=900MHz 0dBm, IQ=100kHz 800mVP-P 1.2VDC
140.0
140.0
120.0
120.0
Current (mA)
80.0
Current (mA)
100.0
100.0
80.0
60.0
60.0
40.0
Vcc=2.7V Vcc=3.0V
40.0
Vcc=2.7V Vcc=3.0V
20.0
Vcc=3.3V
20.0
Vcc=3.3V
0.0 0.0 0.5 1.0 1.5 2.0 2.5
0.0 0.0 0.5 1.0 1.5 2.0 2.5
Gain Control (V)
Gain Control (V)
High Band Return Loss versus Frequency
0.0 LO HB Port RFOUT HB Port -5.0 -5.0 0.0
Low Band Return Loss versus Frequency
LO LB Port RFOUT LB Port
Return Loss (dB)
-10.0
Return Loss (dB)
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0
-10.0
-15.0
-15.0
-20.0
-20.0
-25.0 1700.0
-25.0 700.0
750.0
800.0
850.0
900.0
950.0
1000.0
Frequency (MHz)
Frequency (MHz)
5-48
Rev A2 010904

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